The Role of Oxygen Vacancies and Phase Change in TiN/SiO2/PtFe Resistance nonvolatile Random Access Memories

Recently, since nonvolatile memories acquire a lot of attention and flash memories are facing with the scale limit issue, the next generation nonvolatile memory has been carried out to discover extensively. The resistive random access memories (ReRAMs) that have the strengths of high cell density array, high operation speed, low power consumption, high endurance, lower scale limit and non-destructive readout, are one of the most potential candidate for flash memories. In this thesis, a physical model and mechanism which is about the role of oxygen vacancies and phase change in TiN/SiO2/PtFe resistance nonvolatile random access memories is proposed. This study can be categorized into three parts, different structures, different thermal treatments and small size devices, all of these electrical results can support the model and mechanism. In the first part, replacing metal electrode materials and SiO2 thickness with different structures was found the results which the effective resistance switching region is at interface region, and Fe element